High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications

Authors

  • Hamed Mosalam Electronics Research Institute, Cairo, Egypt
  • Ahmed Gaddallah IHP - Leibniz-Institut für innovative Mikroelectronik Im Technologiepark 25,15236 Frankfurt (Oder), Germany

DOI:

https://doi.org/10.32985/ijeces.12.3.2

Keywords:

Group Delay (GD); Medical Body Area Network (MBAN); Ultra-Wide Band (UWB); Power Added Efficiency (PAE) Class AB, Power Amplifier (PA), CMOS

Abstract

This paper presents the design of 3.1-10.6 GHz class AB power amplifier (PA) suitable for medical body area network (MBAN) Ultra-Wide Band (UWB) applications in TSMC 0.18 µm technology. An optimization technique to simultaneously maximize power added efficiency(PAE) and minimize group delay variation is employed. Source and Load-pull contours are used to design inter and output stage matching circuits. The post-layout simulation results indicated that the designed PA has a maximum PAE of 32 % and an output 1-dB compression of 11 dBm at 4 GHz. In addition, a small group delay variation of ± 50 ps was realized over the whole required frequency band . Moreover, the proposed PA has small signal power gain (S21) of 12.5 dB with ripple less than 1.5 dB over the frequency range between 3.1 GHz to 10.6 GHz, while consuming 36 mW.

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Published

2021-08-27

How to Cite

[1]
H. Mosalam and A. Gaddallah, “High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications”, IJECES, vol. 12, no. 3, pp. 131-138, Aug. 2021.

Issue

Section

Original Scientific Papers